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PNY Electronics PNY 2GB
Kingston 99U5700-032.A00G 16GB
比较
PNY Electronics PNY 2GB vs Kingston 99U5700-032.A00G 16GB
总分
PNY Electronics PNY 2GB
总分
Kingston 99U5700-032.A00G 16GB
差异
规格
评论
差异
需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
低于PassMark测试中的延时,ns
27
32
左右 16% 更低的延时
需要考虑的原因
Kingston 99U5700-032.A00G 16GB
报告一个错误
更快的读取速度,GB/s
14.1
13.8
测试中的平均数值
更快的写入速度,GB/s
10.6
8.4
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
PNY Electronics PNY 2GB
Kingston 99U5700-032.A00G 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
32
读取速度,GB/s
13.8
14.1
写入速度,GB/s
8.4
10.6
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2274
2769
PNY Electronics PNY 2GB RAM的比较
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Kingston 99U5700-032.A00G 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M471A4G43BB1-CWE 32GB
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Kingmax Semiconductor KLDD48F-B8KU5 1GB
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Kingston 99P5474-014.A00LF 4GB
Kingston 9905702-400.A00G 8GB
Kingston 9905469-143.A00LF 4GB
Kingston 99U5624-001.A00G 8GB
A-DATA Technology DQVE1908 512MB
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A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3000C15-8GVR 8GB
SK Hynix HMT42GR7AFR4A-PB 16GB
G Skill Intl F4-3000C15-8GRBB 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
报告一个错误
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Bug description
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