PNY Electronics PNY 2GB vs SK Hynix HMA42GR7MFR4N-TFTD 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

SK Hynix HMA42GR7MFR4N-TFTD 16GB

SK Hynix HMA42GR7MFR4N-TFTD 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 18% 更低的延时
更快的读取速度，GB/s

13.8 8.9

测试中的平均数值
更快的写入速度，GB/s

8.4 8.3

测试中的平均数值

SK Hynix HMA42GR7MFR4N-TFTD 16GB

需要考虑的原因
SK Hynix HMA42GR7MFR4N-TFTD 16GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

SK Hynix HMA42GR7MFR4N-TFTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 33
读取速度，GB/s

13.8 8.9
写入速度，GB/s

8.4 8.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 1946

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA42GR7MFR4N-TFTD 16GB

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Patriot Memory (PDP Systems) 3400 C16 Series 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

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Kingston KHX3600C18D4/16GX 16GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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G Skill Intl F3-1333C9-4GIS 4GB

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SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB