PNY Electronics PNY 2GB vs SK Hynix HMA82GU6CJR8N-VK 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

SK Hynix HMA82GU6CJR8N-VK 16GB

SK Hynix HMA82GU6CJR8N-VK 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 18% 更低的延时

SK Hynix HMA82GU6CJR8N-VK 16GB

需要考虑的原因
SK Hynix HMA82GU6CJR8N-VK 16GB

报告一个错误

更快的读取速度，GB/s

16 13.8

测试中的平均数值
更快的写入速度，GB/s

12.1 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

SK Hynix HMA82GU6CJR8N-VK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 33
读取速度，GB/s

13.8 16.0
写入速度，GB/s

8.4 12.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2274 3082

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 4ATF51264AZ-2G6E1 4GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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G Skill Intl F4-3466C16-8GTZKW 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Corsair CMK64GX4M4B2800C14 16GB

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Samsung M393B1G70BH0-CK0 8GB

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Crucial Technology BLS8G4D26BFSE.16FBD2 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Kingston KVR16N11/8-SP 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

SK Hynix HMA82GU6CJR8N-VK 16GB

SK Hynix HMA82GU6CJR8N-VK 16GB

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

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Gloway International Co. Ltd. STK4U2400D17082C 8GB

Kingston 9965525-144.A00LF 8GB

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Apacer Technology 78.CAGMT.40C0B 8GB

Apacer Technology 78.CAGMT.40C0B 8GB

Kingston 9905471-076.A00LF 8GB

Kingston 9905471-076.A00LF 8GB

Corsair CMK64GX4M2D3600C18 32GB

Corsair CMK64GX4M2D3600C18 32GB

Kingston KHX1600C10D3/8GXF 8GB

Kingston KHX1600C10D3/8GXF 8GB

G Skill Intl F4-3200C15-8GVR 8GB

G Skill Intl F4-3200C15-8GVR 8GB