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PNY Electronics PNY 2GB
Smart Modular SF464128CKHI6DFSEG 4GB

PNY Electronics PNY 2GB vs Smart Modular SF464128CKHI6DFSEG 4GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Smart Modular SF464128CKHI6DFSEG 4GB

Smart Modular SF464128CKHI6DFSEG 4GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 36
    左右 25% 更低的延时
Smart Modular SF464128CKHI6DFSEG 4GB 需要考虑的原因
Smart Modular SF464128CKHI6DFSEG 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.3 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.6 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Smart Modular SF464128CKHI6DFSEG 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 36
  • 读取速度，GB/s
    13.8 left arrow 15.3
  • 写入速度，GB/s
    8.4 left arrow 11.6
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 2482

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Smart Modular SF464128CKHI6DFSEG 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Smart Modular SF464128CKHI6DFSEG 4GB
Smart Modular SF464128CKHI6DFSEG 4GB
内存RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
INTENSO 5641160 8GB
INTENSO 5641160 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Corsair CMK32GX4M4B3333C16 8GB
Corsair CMK32GX4M4B3333C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-2800C15-8GTZB 8GB
G Skill Intl F4-2800C15-8GTZB 8GB
内存RAM
Corsair CMK32GX4M2D3600C16 16GB
Corsair CMK32GX4M2D3600C16 16GB
Kingston KF3600C16D4/16GX 16GB
Kingston KF3600C16D4/16GX 16GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Kingston 9905624-007.A00G 8GB
Kingston 9905624-007.A00G 8GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
Kingston KHX3600C18D4/16GX 16GB
Kingston KHX3600C18D4/16GX 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Crucial Technology BL16G36C16U4R.M8FB1 16GB
Crucial Technology BL16G36C16U4R.M8FB1 16GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Samsung M393A1G43DB0-CPB 8GB
Samsung M393A1G43DB0-CPB 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
内存RAM