Protocol Engines Kingrock 800 2GB 2GB vs G Skill Intl F4-3000C15-4GTZB 4GB

总分

Protocol Engines Kingrock 800 2GB 2GB

Protocol Engines Kingrock 800 2GB 2GB

总分

G Skill Intl F4-3000C15-4GTZB 4GB

G Skill Intl F4-3000C15-4GTZB 4GB

差异规格评论

差异

Protocol Engines Kingrock 800 2GB 2GB

需要考虑的原因
Protocol Engines Kingrock 800 2GB 2GB

报告一个错误

更快的读取速度，GB/s

4 19.1

测试中的平均数值

G Skill Intl F4-3000C15-4GTZB 4GB

需要考虑的原因
G Skill Intl F4-3000C15-4GTZB 4GB

报告一个错误

低于PassMark测试中的延时，ns

19 51

左右 -168% 更低的延时
更快的写入速度，GB/s

14.8 1,832.2

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Protocol Engines Kingrock 800 2GB 2GB

G Skill Intl F4-3000C15-4GTZB 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

51 19
读取速度，GB/s

4,433.3 19.1
写入速度，GB/s

1,832.2 14.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

646 2994

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Corsair CMR32GX4M2C3000C15 16GB

Corsair CMR32GX4M2C3000C15 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Corsair CMK16GX4M4A2666C15 4GB

Corsair CMK16GX4M4A2666C15 4GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Apacer Technology D12.2324CS.001 8GB

Apacer Technology D12.2324CS.001 8GB

Protocol Engines Kingrock 800 2GB 2GB

Protocol Engines Kingrock 800 2GB 2GB

G Skill Intl F4-2800C15-8GTXG 8GB

G Skill Intl F4-2800C15-8GTXG 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology BL16G32C16U4R.16FE 16GB

Crucial Technology BL16G32C16U4R.16FE 16GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Samsung M471A5644EB0-CPB 2GB

Samsung M471A5644EB0-CPB 2GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Samsung M378A2G43AB3-CWE 16GB

Samsung M378A2G43AB3-CWE 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Ramaxel Technology RMSA3260MB78HAF2400 8GB

Ramaxel Technology RMSA3260MB78HAF2400 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Apacer Technology 78.CAGR9.40C0B 8GB

Apacer Technology 78.CAGR9.40C0B 8GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Crucial Technology CT16G4SFD8266.C16FJ 16GB

Crucial Technology CT16G4SFD8266.C16FJ 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB