PUSKILL DDR3 1600 8G 8GB vs Apacer Technology D22.2221ZA.001 8GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Apacer Technology D22.2221ZA.001 8GB

Apacer Technology D22.2221ZA.001 8GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 50

左右 24% 更低的延时
更快的读取速度，GB/s

16.7 12.8

测试中的平均数值
更快的写入速度，GB/s

10.0 6.6

测试中的平均数值

Apacer Technology D22.2221ZA.001 8GB

需要考虑的原因
Apacer Technology D22.2221ZA.001 8GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Apacer Technology D22.2221ZA.001 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 50
读取速度，GB/s

16.7 12.8
写入速度，GB/s

10.0 6.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2753 1947

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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G Skill Intl F4-2800C16-4GRK 4GB

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Kingston 99U5403-036.A00G 4GB

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Samsung M378A1K43EB2-CWE 8GB

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Corsair CMD64GX4M8X3800C19 8GB

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Samsung M3 78T5663RZ3-CF7 2GB

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Corsair CM4X16GC3000C15D4 16GB

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Apacer Technology 78.01GA0.9K5 1GB

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Patriot Memory (PDP Systems) 2800 C18 Series 16GB

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Kingston 99U5474-028.A00LF 4GB

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Kingston ACR256X64D3S1333C9 2GB

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Micron Technology 18ASF2G72AZ-2G3B1 16GB

Micron Technology 18ASF2G72AZ-2G3B1 16GB

Samsung M471B5173EB0-YK0 4GB

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Corsair CMK16GX4M2K4133C19 8GB

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Kingston 99U5403-465.A00LF 8GB

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Corsair CMR16GX4M2C 8GB

Corsair CMR16GX4M2C 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Patriot Memory (PDP Systems) PSD48G240082 8GB

Patriot Memory (PDP Systems) PSD48G240082 8GB

Samsung M3 91T2953GZ3-CF7 1GB

Samsung M3 91T2953GZ3-CF7 1GB

Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB

Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

Micron Technology 8ATF1G64AZ-2G1B1 8GB

Micron Technology 8ATF1G64AZ-2G1B1 8GB