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PUSKILL DDR3 1600 8G 8GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB

PUSKILL DDR3 1600 8G 8GB vs Chun Well Technology Holding Limited MD4U1636181DCW 16GB

总分
star star star star star
PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分
star star star star star
Chun Well Technology Holding Limited MD4U1636181DCW 16GB

Chun Well Technology Holding Limited MD4U1636181DCW 16GB

差异 规格 评论

差异

PUSKILL DDR3 1600 8G 8GB 需要考虑的原因
PUSKILL DDR3 1600 8G 8GB
报告一个错误
Chun Well Technology Holding Limited MD4U1636181DCW 16GB 需要考虑的原因
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 38
    左右 -36% 更低的延时
  • 更快的读取速度，GB/s
    18.1 left arrow 16.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.6 left arrow 10.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
PUSKILL DDR3 1600 8G 8GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 28
  • 读取速度，GB/s
    16.7 left arrow 18.1
  • 写入速度，GB/s
    10.0 left arrow 15.6
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2753 left arrow 3693

PUSKILL DDR3 1600 8G 8GB RAM的比较

A-DATA Technology DDR3 1866 8GB
Crucial Technology CT16G4DFD8266.M16FE 16GB

Chun Well Technology Holding Limited MD4U1636181DCW 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Chun Well Technology Holding Limited MD4U1636181DCW 16G
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-2400C15-8GTZRX 8GB
G Skill Intl F4-2400C15-8GTZRX 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Team Group Inc. DDR4 2800 8GB
Team Group Inc. DDR4 2800 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Mushkin MR[ABC]4U320GJJM16G 16GB
Mushkin MR[ABC]4U320GJJM16G 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Samsung V-GeN D4S16GL26A8TL6 16GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Kingston KF3733C19D4/16GX 16GB
Kingston KF3733C19D4/16GX 16GB
内存RAM
A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
Team Group Inc. TEAMGROUP-UD4-3866 8GB
Team Group Inc. TEAMGROUP-UD4-3866 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CMK64GX4M4C3333C16 16GB
Corsair CMK64GX4M4C3333C16 16GB
内存RAM
Kingston KHX3600C17D4/8GX 8GB
Kingston KHX3600C17D4/8GX 8GB
Kingston KHX3600C17D4/16GX 16GB
Kingston KHX3600C17D4/16GX 16GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Corsair CMSX32GX4M2A2666C18 16GB
Corsair CMSX32GX4M2A2666C18 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-2133C15-8GRB 8GB
G Skill Intl F4-2133C15-8GRB 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-4800C18-8GTRG 8GB
G Skill Intl F4-4800C18-8GTRG 8GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Avant Technology J641GU42J5213N0 8GB
Avant Technology J641GU42J5213N0 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Corsair CMR64GX4M8C3200C16 8GB
Corsair CMR64GX4M8C3200C16 8GB
内存RAM