PUSKILL DDR3 1600 8G 8GB vs Corsair CM4X8GF2400C14K4 8GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Corsair CM4X8GF2400C14K4 8GB

Corsair CM4X8GF2400C14K4 8GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

Corsair CM4X8GF2400C14K4 8GB

需要考虑的原因
Corsair CM4X8GF2400C14K4 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 38

左右 -73% 更低的延时
更快的读取速度，GB/s

17.5 16.7

测试中的平均数值
更快的写入速度，GB/s

12.6 10.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Corsair CM4X8GF2400C14K4 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 22
读取速度，GB/s

16.7 17.5
写入速度，GB/s

10.0 12.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2753 3057

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9965525-155.A00LF 8GB

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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

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Kingmax Semiconductor GZNG43F-18---------- 8GB

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Kingston 9905702-010.A00G 8GB

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G Skill Intl F4-3200C16-4GTZB 4GB

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Kingston KVR16N11/8-SP 8GB

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G Skill Intl F4-3200C15-8GTZKY 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

Avant Technology W641GU42J9266NB 8GB

Avant Technology W641GU42J9266NB 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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G Skill Intl F4-3333C16-8GTZSK 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

G Skill Intl F4-3200C14-8GVK 8GB

G Skill Intl F4-3200C14-8GVK 8GB