RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M4 70T5663QZ3-CF7 2GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB

Samsung M4 70T5663QZ3-CF7 2GB vs Micron Technology 16ATF2G64HZ-3G2J1 16GB

总分
star star star star star
Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

总分
star star star star star
Micron Technology 16ATF2G64HZ-3G2J1 16GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

差异 规格 评论

差异

Samsung M4 70T5663QZ3-CF7 2GB 需要考虑的原因
Samsung M4 70T5663QZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.4
    测试中的平均数值
Micron Technology 16ATF2G64HZ-3G2J1 16GB 需要考虑的原因
Micron Technology 16ATF2G64HZ-3G2J1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 64
    左右 -88% 更低的延时
  • 更快的写入速度，GB/s
    12.4 left arrow 1,869.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T5663QZ3-CF7 2GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    64 left arrow 34
  • 读取速度，GB/s
    4,477.7 left arrow 15.4
  • 写入速度，GB/s
    1,869.1 left arrow 12.4
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    697 left arrow 2974

Samsung M4 70T5663QZ3-CF7 2GB RAM的比较

Samsung M4 70T5663RZ3-CF7 2GB
SK Hynix HYMP125S64CP8-S6 2GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMK64GX4M4B3200C16 16GB
Corsair CMK64GX4M4B3200C16 16GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Samsung M393A8K40B21-CTC 64GB
Samsung M393A8K40B21-CTC 64GB
内存RAM
Samsung M4 70T5663QZ3-CF7 2GB
Samsung M4 70T5663QZ3-CF7 2GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Mushkin MR[A/B]4U280HHHH8G 8GB
Mushkin MR[A/B]4U280HHHH8G 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLT4G4D26AFTA.8FADG 4GB
Crucial Technology BLT4G4D26AFTA.8FADG 4GB
内存RAM
Samsung M3 78T5663EH3-CF7 2GB
Samsung M3 78T5663EH3-CF7 2GB
Essencore Limited KD4AGSA8A-32N2200 16GB
Essencore Limited KD4AGSA8A-32N2200 16GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Crucial Technology BL16G26C16U4B.16FE 16GB
Crucial Technology BL16G26C16U4B.16FE 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-3200C16-4GVKB 4GB
G Skill Intl F4-3200C16-4GVKB 4GB
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
Kingston KH2400C15D4/8 8GB
Kingston KH2400C15D4/8 8GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston 9965669-018.A00G 16GB
Kingston 9965669-018.A00G 16GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Micron Technology TEAMGROUP-UD4-3000 16GB
Micron Technology TEAMGROUP-UD4-3000 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston XW21KG-HYD-NX 8GB
Kingston XW21KG-HYD-NX 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CT4G4DFS8266.C8FF 4GB
Crucial Technology CT4G4DFS8266.C8FF 4GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
G Skill Intl F4-3000C16-16GISB 16GB
G Skill Intl F4-3000C16-16GISB 16GB
内存RAM