PUSKILL DDR3 1600 8G 8GB vs Crucial Technology CT16G4DFD8213.C16FH1 16GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Crucial Technology CT16G4DFD8213.C16FH1 16GB

Crucial Technology CT16G4DFD8213.C16FH1 16GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

更快的读取速度，GB/s

16.7 14.8

测试中的平均数值
更快的写入速度，GB/s

10.0 8.2

测试中的平均数值

Crucial Technology CT16G4DFD8213.C16FH1 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8213.C16FH1 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 38

左右 -19% 更低的延时
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Crucial Technology CT16G4DFD8213.C16FH1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 32
读取速度，GB/s

16.7 14.8
写入速度，GB/s

10.0 8.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2753 2533

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Kingston 99U5584-005.A00LF 4GB

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SK Hynix HMA41GR7AFR8N-UH 8GB

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Samsung M393B5170FH0-CK0 4GB

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Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

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Apacer Technology D22.2221ZA.001 8GB

Apacer Technology D22.2221ZA.001 8GB

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SK Hynix DDR2 800 2G 2GB

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Crucial Technology CT8G4SFS824A.C8FBD1 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Corsair CMK32GX4M2D3200C16 16GB

Corsair CMK32GX4M2D3200C16 16GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

A-DATA Technology AO1P21FC8T1-BSKS 8GB

A-DATA Technology AO1P21FC8T1-BSKS 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

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G Skill Intl F4-3600C18-16GVK 16GB

A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

Corsair CM4X16GE2666Z16K4 16GB

Corsair CM4X16GE2666Z16K4 16GB