Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Crucial Technology CT16G4DFD8213.C16FH1 16GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

Crucial Technology CT16G4DFD8213.C16FH1 16GB

Crucial Technology CT16G4DFD8213.C16FH1 16GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 32

左右 9% 更低的延时
更快的读取速度，GB/s

16.9 14.8

测试中的平均数值
更快的写入速度，GB/s

12.0 8.2

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Crucial Technology CT16G4DFD8213.C16FH1 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8213.C16FH1 16GB

报告一个错误

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT16G4DFD8213.C16FH1 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 32
读取速度，GB/s

16.9 14.8
写入速度，GB/s

12.0 8.2
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2601 2533

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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G Skill Intl F4-4500C19-8GTZSWE 8GB

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Qimonda 64T128020EDL2.5C2 1GB

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Corsair CMK16GX4M4B3400C16 4GB

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Kingston KVR16N11/8-SP 8GB

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Smart Modular SF4641G8CK8IEGKSBG 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-3000C15-4GVRB 4GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Kingston 9905703-011.A00G 16GB

Kingston 9905703-011.A00G 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

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Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology BLS8G4S240FSD.16FBD2 8GB

Crucial Technology BLS8G4S240FSD.16FBD2 8GB