PUSKILL DDR3 1600 8G 8GB vs Gloway International Co. Ltd. TYP4U3000E16082C 8GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 53

左右 28% 更低的延时
更快的读取速度，GB/s

16.7 16.5

测试中的平均数值
更快的写入速度，GB/s

10.0 9.6

测试中的平均数值

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

需要考虑的原因
Gloway International Co. Ltd. TYP4U3000E16082C 8GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 53
读取速度，GB/s

16.7 16.5
写入速度，GB/s

10.0 9.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2753 2301

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Smart Modular SH564128FH8NZQNSCG 4GB

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A-DATA Technology DQVE1908 512MB

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Kingston 9905471-030.A00LF 8GB

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Samsung M471B5773DH0-CH9 2GB

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Apacer Technology 78.B1GET.AU00C 4GB

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Kingston KHX2400C15/16G 16GB

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Samsung M471B5273DH0-CH9 4GB

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Corsair CMW32GX4M2D3000C16 16GB

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Crucial Technology CT102464BF160B-16F 8GB

G Skill Intl F4-2800C15-8GTZB 8GB

G Skill Intl F4-2800C15-8GTZB 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Apacer Technology 78.D2GG7.AU30B 16GB

Apacer Technology 78.D2GG7.AU30B 16GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Corsair CMK32GX4M2C3333C16 16GB

Corsair CMK32GX4M2C3333C16 16GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N