PUSKILL DDR3 1600 8G 8GB vs Kingston HX426C16FB2/8-SP 8GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Kingston HX426C16FB2/8-SP 8GB

Kingston HX426C16FB2/8-SP 8GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 50

左右 24% 更低的延时
更快的读取速度，GB/s

16.7 10

测试中的平均数值
更快的写入速度，GB/s

10.0 7.8

测试中的平均数值

Kingston HX426C16FB2/8-SP 8GB

需要考虑的原因
Kingston HX426C16FB2/8-SP 8GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Kingston HX426C16FB2/8-SP 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 50
读取速度，GB/s

16.7 10.0
写入速度，GB/s

10.0 7.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2753 2159

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Samsung M471A4G43AB1-CWE 32GB

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ASint Technology SSA302G08-EGN1C 4GB

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Super Talent F21UB8GS 8GB

Super Talent F21UB8GS 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Corsair CMK8GX4M1Z3600C18 8GB

Corsair CMK8GX4M1Z3600C18 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

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Kingston KVR533D2N4 512MB

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G Skill Intl F4-3733C17-8GTZSW 8GB

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Kingston HP669238-071-HYC 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB