PUSKILL DDR3 1600 8G 8GB vs Kingston KHYXPX-MID 8GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Kingston KHYXPX-MID 8GB

Kingston KHYXPX-MID 8GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

更快的读取速度，GB/s

16.7 13.9

测试中的平均数值
更快的写入速度，GB/s

10.0 8.9

测试中的平均数值

Kingston KHYXPX-MID 8GB

需要考虑的原因
Kingston KHYXPX-MID 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 38

左右 -9% 更低的延时
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Kingston KHYXPX-MID 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 35
读取速度，GB/s

16.7 13.9
写入速度，GB/s

10.0 8.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2753 2127

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

SK Hynix HMA82GU6CJR8N-XN 16GB

SK Hynix HMA82GU6CJR8N-XN 16GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

G Skill Intl F4-3600C16-8GTZRC 8GB

G Skill Intl F4-3600C16-8GTZRC 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Avant Technology W6451U48J7240N6 4GB

Avant Technology W6451U48J7240N6 4GB

Kingston ACR16D3LS1NGG/4G 4GB

Kingston ACR16D3LS1NGG/4G 4GB

Crucial Technology CT32G4SFD832A.M16FF 32GB

Crucial Technology CT32G4SFD832A.M16FF 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Smart Modular SF4641G8CKHI6DFSDS 8GB

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