PUSKILL DDR3 1600 8G 8GB vs Team Group Inc. TEAMGROUP-D4-3866 4GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Team Group Inc. TEAMGROUP-D4-3866 4GB

Team Group Inc. TEAMGROUP-D4-3866 4GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

Team Group Inc. TEAMGROUP-D4-3866 4GB

需要考虑的原因
Team Group Inc. TEAMGROUP-D4-3866 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 38

左右 -124% 更低的延时
更快的读取速度，GB/s

21.6 16.7

测试中的平均数值
更快的写入速度，GB/s

18.6 10.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Team Group Inc. TEAMGROUP-D4-3866 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 17
读取速度，GB/s

16.7 21.6
写入速度，GB/s

10.0 18.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2753 3528

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Team Group Inc. TEAMGROUP-D4-3866 4GB

Team Group Inc. TEAMGROUP-D4-3866 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-4600C19-8GTZKKC 8GB

G Skill Intl F4-4600C19-8GTZKKC 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

G Skill Intl F4-3200C16-8GTRG 8GB

G Skill Intl F4-3200C16-8GTRG 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kingston XRGM6C-MIB 16GB

Kingston XRGM6C-MIB 16GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Kingston KF3200C16D4/16GX 16GB

Kingston KF3200C16D4/16GX 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Corsair CMU32GX4M4C3466C16 8GB

Corsair CMU32GX4M4C3466C16 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMSX16GX4M2A3000C18 8GB

Corsair CMSX16GX4M2A3000C18 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Micron Technology 8ATF1G64AZ-2G3A1 8GB

Micron Technology 8ATF1G64AZ-2G3A1 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

SK Hynix HMA82GR7AFR8N-UH 16GB

SK Hynix HMA82GR7AFR8N-UH 16GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Crucial Technology BLS8G4D240FSC.16FBD2 8GB

Crucial Technology BLS8G4D240FSC.16FBD2 8GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Crucial Technology CT8G4DFS8266.K8FB 8GB

Crucial Technology CT8G4DFS8266.K8FB 8GB

Mushkin 991586 2GB

Mushkin 991586 2GB

G Skill Intl F4-3200C16-8GSXWB 8GB

G Skill Intl F4-3200C16-8GSXWB 8GB