Samsung M395T2863QZ4-CF76 1GB vs Kingmax Semiconductor GZOH23F-18---------- 16GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Kingmax Semiconductor GZOH23F-18---------- 16GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 14.7

测试中的平均数值

Kingmax Semiconductor GZOH23F-18---------- 16GB

需要考虑的原因
Kingmax Semiconductor GZOH23F-18---------- 16GB

报告一个错误

低于PassMark测试中的延时，ns

41 104

左右 -154% 更低的延时
更快的写入速度，GB/s

7.7 2,404.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 41
读取速度，GB/s

3,192.0 14.7
写入速度，GB/s

2,404.5 7.7
内存带宽，mbps

6400 19200

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

786 2154

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Essencore Limited KD48GU88C-26N1600 8GB

Corsair CM4B16G7L2666A16K2-O 16GB

Corsair CM4B16G7L2666A16K2-O 16GB

Samsung M393A1G40DB0-CPB 8GB

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SK Hynix HMA81GS6CJR8N-VK 8GB

SK Hynix HMA81GS6CJR8N-VK 8GB

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Strontium EVMT8G1600U86S 8GB

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G Skill Intl F4-4000C14-16GTZR 16GB

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