Strontium EVMT8G1600U86S 8GB vs G Skill Intl F4-4000C14-16GTZR 16GB

总分

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

总分

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

差异规格评论

差异

Strontium EVMT8G1600U86S 8GB

需要考虑的原因
Strontium EVMT8G1600U86S 8GB

报告一个错误

G Skill Intl F4-4000C14-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-4000C14-16GTZR 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 31

左右 -7% 更低的延时
更快的读取速度，GB/s

24 11.7

测试中的平均数值
更快的写入速度，GB/s

20.0 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Strontium EVMT8G1600U86S 8GB

G Skill Intl F4-4000C14-16GTZR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 29
读取速度，GB/s

11.7 24.0
写入速度，GB/s

7.2 20.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1990 4156

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

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Micron Technology 8ATF2G64AZ-3G2B1 16GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Essencore Limited KD48GS88A-26N1600 8GB

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Samsung 1600 CL10 Series 8GB

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Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Apacer Technology 78.CAGP7.40C0B 8GB

Apacer Technology 78.CAGP7.40C0B 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Kingston 9905624-036.A00G 8GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

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Kingston HX318C10FK/4 4GB

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Crucial Technology CT8G4DFS824A.M8FH3 8GB