PUSKILL PJ16TFK1GM8 16GB vs Corsair CMK32GX5M2A4800C40 16GB

总分

PUSKILL PJ16TFK1GM8 16GB

PUSKILL PJ16TFK1GM8 16GB

总分

Corsair CMK32GX5M2A4800C40 16GB

Corsair CMK32GX5M2A4800C40 16GB

差异规格评论

差异

PUSKILL PJ16TFK1GM8 16GB

需要考虑的原因
PUSKILL PJ16TFK1GM8 16GB

报告一个错误

Corsair CMK32GX5M2A4800C40 16GB

需要考虑的原因
Corsair CMK32GX5M2A4800C40 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 41

左右 -46% 更低的延时
更快的读取速度，GB/s

14 12.7

测试中的平均数值
更快的写入速度，GB/s

12.3 10.7

测试中的平均数值

规格

完整的技术规格清单

PUSKILL PJ16TFK1GM8 16GB

Corsair CMK32GX5M2A4800C40 16GB

主要特点

存储器类型

DDR4 DDR5
PassMark中的延时，ns

41 28
读取速度，GB/s

12.7 14.0
写入速度，GB/s

10.7 12.3
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz no data / 2400 MHz
排名PassMark (越多越好)

2621 3335

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5474-010.A00LF 2GB

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PNY Electronics PNY 2GB

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Kingston 99U5474-010.A00LF 2GB

SK Hynix HMA41GU6AFR8N-TF 8GB

SK Hynix HMA41GU6AFR8N-TF 8GB

Samsung M378A1K43EB2-CVF 8GB

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Tanbassh 8G 2666MHZ 8GB

Tanbassh 8G 2666MHZ 8GB

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Kingston KHX1600C9D3/8G 8GB

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Kingston 99U5469-045.A00LF 4GB

Gloway International (HK) STK4U2400D17081C 8GB

Gloway International (HK) STK4U2400D17081C 8GB

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Corsair CM2X1024-6400C4 1GB

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Kingston 99U5665-001.A00G 4GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Corsair CMW32GX4M2D3000C16 16GB

Corsair CMW32GX4M2D3000C16 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMK16GX4M2A2400C14 8GB

Corsair CMK16GX4M2A2400C14 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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G Skill Intl F4-2666C18-4GFX 4GB