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Qimonda 64T128020EDL2.5C2 1GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

Qimonda 64T128020EDL2.5C2 1GB vs Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

总分
star star star star star
Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

总分
star star star star star
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

差异 规格 评论

差异

Qimonda 64T128020EDL2.5C2 1GB 需要考虑的原因
Qimonda 64T128020EDL2.5C2 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.7
    测试中的平均数值
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB 需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 79
    左右 -172% 更低的延时
  • 更快的写入速度，GB/s
    13.5 left arrow 1,468.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Qimonda 64T128020EDL2.5C2 1GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    79 left arrow 29
  • 读取速度，GB/s
    3,061.8 left arrow 16.7
  • 写入速度，GB/s
    1,468.1 left arrow 13.5
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    422 left arrow 3076

Qimonda 64T128020EDL2.5C2 1GB RAM的比较

Micron Technology 8HTF12864HDY-800G1 1GB
G Skill Intl F4-2666C18-8GFX 8GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
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Corsair CMX4GX3M1A1333C9 4GB
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Kingston 9905471-076.A00LF 8GB
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Kingston KVR16N11/8-SP 8GB
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SK Hynix DDR2 800 2G 2GB
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内存RAM
Samsung M378B5673FH0-CH9 2GB
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内存RAM
Kingston 9965525-140.A00LF 8GB
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内存RAM
AMD R538G1601U2S-UO 8GB
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内存RAM
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Crucial Technology CT102464BD160B.M16 8GB
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Kingston 9905700-046.A00G 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Essencore Limited IM48GU88N26-GIIHA0 8GB
Essencore Limited IM48GU88N26-GIIHA0 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
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内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
G Skill Intl F4-4400C19-8GTZSW 8GB
G Skill Intl F4-4400C19-8GTZSW 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BLT8G4D30AETA.K16FD 8GB
Crucial Technology BLT8G4D30AETA.K16FD 8GB
内存RAM