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Samsung M395T2863QZ4-CF76 1GB
Samsung M393A2K40CB1-CRC 16GB

Samsung M395T2863QZ4-CF76 1GB vs Samsung M393A2K40CB1-CRC 16GB

总分
star star star star star
Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分
star star star star star
Samsung M393A2K40CB1-CRC 16GB

Samsung M393A2K40CB1-CRC 16GB

差异 规格 评论

差异

Samsung M395T2863QZ4-CF76 1GB 需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 10.7
    测试中的平均数值
Samsung M393A2K40CB1-CRC 16GB 需要考虑的原因
Samsung M393A2K40CB1-CRC 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    45 left arrow 104
    左右 -131% 更低的延时
  • 更快的写入速度，GB/s
    6.5 left arrow 2,404.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
Samsung M393A2K40CB1-CRC 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    104 left arrow 45
  • 读取速度，GB/s
    3,192.0 left arrow 10.7
  • 写入速度，GB/s
    2,404.5 left arrow 6.5
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    no data left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    786 left arrow 2142

Samsung M395T2863QZ4-CF76 1GB RAM的比较

takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB

Samsung M393A2K40CB1-CRC 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Samsung M393A2K40CB1-CRC 16GB
Samsung M393A2K40CB1-CRC 16GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Corsair CMK16GX4M4B3866C18 4GB
Corsair CMK16GX4M4B3866C18 4GB
内存RAM
TwinMOS 9DNPBNZB-TATP 4GB
TwinMOS 9DNPBNZB-TATP 4GB
Kingston KDK8NX-MIE 16GB
Kingston KDK8NX-MIE 16GB
内存RAM
Team Group Inc. ZEUS-2133 8GB
Team Group Inc. ZEUS-2133 8GB
Samsung M47472K43DB1-CTD 16GB
Samsung M47472K43DB1-CTD 16GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
Samsung M391A1G43EB1-CRC 8GB
Samsung M391A1G43EB1-CRC 8GB
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMU16GX4M2C3200C16 8GB
Corsair CMU16GX4M2C3200C16 8GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Apacer Technology 78.CAGP7.AZC0B 8GB
Apacer Technology 78.CAGP7.AZC0B 8GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Crucial Technology CT8G4DFS8213.C8FDR1 8GB
Crucial Technology CT8G4DFS8213.C8FDR1 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 8ATF1G64HZ-2G6E1 8GB
Micron Technology 8ATF1G64HZ-2G6E1 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Corsair CMK16GX4M2Z3600C18 8GB
Corsair CMK16GX4M2Z3600C18 8GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Kingston 99U5702-101.A00G 8GB
Kingston 99U5702-101.A00G 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Apacer Technology 76.D105G.D090B 16GB
Apacer Technology 76.D105G.D090B 16GB
内存RAM