Qimonda 72T128420EFA3SB2 1GB vs Corsair CMD8GX4M2B3200C16 4GB

总分

Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

总分

Corsair CMD8GX4M2B3200C16 4GB

Corsair CMD8GX4M2B3200C16 4GB

差异规格评论

差异

Qimonda 72T128420EFA3SB2 1GB

需要考虑的原因
Qimonda 72T128420EFA3SB2 1GB

报告一个错误

更快的读取速度，GB/s

3 19.5

测试中的平均数值
更快的写入速度，GB/s

2,069.2 16.3

测试中的平均数值

Corsair CMD8GX4M2B3200C16 4GB

需要考虑的原因
Corsair CMD8GX4M2B3200C16 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 106

左右 -342% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Qimonda 72T128420EFA3SB2 1GB

Corsair CMD8GX4M2B3200C16 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

106 24
读取速度，GB/s

3,273.7 19.5
写入速度，GB/s

2,069.2 16.3
内存带宽，mbps

5300 17000

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

734 3718

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3400C16-8GTZKW 8GB

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Samsung M471B5173DB0-YK0 4GB

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V-Color Technology Inc. TA48G32S816SK 8GB

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Kingston 99U5429-007.A00LF 2GB

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Crucial Technology BLS16G4D240FSC.16FAD 16GB

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Samsung M471B5173QH0-YK0 4GB

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G Skill Intl F4-2133C15-4GRS 4GB

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Kingston 99U5584-001.A00LF 4GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Kingston 9905403-156.A00LF 2GB

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Corsair CMK32GX4M2B3000C15 16GB

Corsair CMK32GX4M2B3000C15 16GB

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AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

SK Hynix HMA84GL7AFR4N-UH 32GB

SK Hynix HMA84GL7AFR4N-UH 32GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Kingston 9905663-006.A00G 16GB

Kingston 9905663-006.A00G 16GB