Qimonda 72T128420EFA3SB2 1GB vs G Skill Intl F4-3000C16-16GTZN 16GB

总分

Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

总分

G Skill Intl F4-3000C16-16GTZN 16GB

G Skill Intl F4-3000C16-16GTZN 16GB

差异规格评论

差异

Qimonda 72T128420EFA3SB2 1GB

需要考虑的原因
Qimonda 72T128420EFA3SB2 1GB

报告一个错误

更快的读取速度，GB/s

3 17.5

测试中的平均数值
更快的写入速度，GB/s

2,069.2 15.0

测试中的平均数值

G Skill Intl F4-3000C16-16GTZN 16GB

需要考虑的原因
G Skill Intl F4-3000C16-16GTZN 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 106

左右 -242% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Qimonda 72T128420EFA3SB2 1GB

G Skill Intl F4-3000C16-16GTZN 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

106 31
读取速度，GB/s

3,273.7 17.5
写入速度，GB/s

2,069.2 15.0
内存带宽，mbps

5300 17000

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

734 3861

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology AD73I1C1674EV 4GB

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Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Samsung M3 78T2863QZS-CF7 1GB

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V-Color Technology Inc. TL48G32S8RRGB16 8GB

V-Color Technology Inc. TL48G32S8RRGB16 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

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G Skill Intl F4-3000C15-16GTZ 16GB

G Skill Intl F4-3000C15-16GTZ 16GB

Samsung M393B2G70BH0-CK0 16GB

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Kingston 9905630-051.A00G 16GB