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Ramaxel Technology RMR5030ME68F9F1600 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Ramaxel Technology RMR5030ME68F9F1600 4GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

总分
star star star star star
Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

总分
star star star star star
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

差异 规格 评论

差异

Ramaxel Technology RMR5030ME68F9F1600 4GB 需要考虑的原因
Ramaxel Technology RMR5030ME68F9F1600 4GB
报告一个错误
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB 需要考虑的原因
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 42
    左右 -31% 更低的延时
  • 更快的读取速度，GB/s
    19.4 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.3 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMR5030ME68F9F1600 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 32
  • 读取速度，GB/s
    13.2 left arrow 19.4
  • 写入速度，GB/s
    7.8 left arrow 16.3
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2001 left arrow 3726

Ramaxel Technology RMR5030ME68F9F1600 4GB RAM的比较

Ramaxel Technology RMR5030EB68F9W1600 4GB
Samsung M378A1K43BB2-CRC 8GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Golden Empire CL14-14-14 D4-2400 16GB
Golden Empire CL14-14-14 D4-2400 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology CT8G4DFS8266.K8FB 8GB
Crucial Technology CT8G4DFS8266.K8FB 8GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
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Corsair CMD16GX4M2B2800C14 8GB
内存RAM
Kingston 9965516-049.A00LF 8GB
Kingston 9965516-049.A00LF 8GB
SK Hynix HMA82GS6JJR8N-VK 16GB
SK Hynix HMA82GS6JJR8N-VK 16GB
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Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston XN205T-MIE2 16GB
Kingston XN205T-MIE2 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Maxsun MSD416G26Q3 16GB
Maxsun MSD416G26Q3 16GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
Teikon TMA451S6AFR8N-TFSC 4GB
Teikon TMA451S6AFR8N-TFSC 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT16G4DFD824A.C16FJ 16GB
Crucial Technology CT16G4DFD824A.C16FJ 16GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Corsair CMU64GX4M4D3000C16 16GB
Corsair CMU64GX4M4D3000C16 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Kingston HP26D4U9D8ME-16X 16GB
Kingston HP26D4U9D8ME-16X 16GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Kingston XG9XKG-MIE 16GB
Kingston XG9XKG-MIE 16GB
内存RAM