RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramaxel Technology RMR5030ME68F9F1600 4GB
Gold Key Technology Co Ltd GKE160SO102408-2933 16GB
比较
Ramaxel Technology RMR5030ME68F9F1600 4GB vs Gold Key Technology Co Ltd GKE160SO102408-2933 16GB
总分
Ramaxel Technology RMR5030ME68F9F1600 4GB
总分
Gold Key Technology Co Ltd GKE160SO102408-2933 16GB
差异
规格
评论
差异
需要考虑的原因
Ramaxel Technology RMR5030ME68F9F1600 4GB
报告一个错误
需要考虑的原因
Gold Key Technology Co Ltd GKE160SO102408-2933 16GB
报告一个错误
低于PassMark测试中的延时,ns
27
42
左右 -56% 更低的延时
更快的读取速度,GB/s
16.5
13.2
测试中的平均数值
更快的写入速度,GB/s
12.0
7.8
测试中的平均数值
更高的内存带宽,mbps
23400
12800
左右 1.83 更高的带宽
规格
完整的技术规格清单
Ramaxel Technology RMR5030ME68F9F1600 4GB
Gold Key Technology Co Ltd GKE160SO102408-2933 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
27
读取速度,GB/s
13.2
16.5
写入速度,GB/s
7.8
12.0
内存带宽,mbps
12800
23400
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-23400, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
9-9-9-24 / 1600 MHz
19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)
2001
3245
Ramaxel Technology RMR5030ME68F9F1600 4GB RAM的比较
Ramaxel Technology RMR5030EB68F9W1600 4GB
Samsung M378A1K43BB2-CRC 8GB
Gold Key Technology Co Ltd GKE160SO102408-2933 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Patriot Memory (PDP Systems) PSD34G16002 4GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
SK Hynix DDR2 800 2G 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Crucial Technology 8G4US2400.M8B1 8GB
SpecTek Incorporated ?????????????????? 2GB
Micron Technology AFSD416ES1P 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Chun Well Technology Holding Limited D4U1636144B 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston ACR32D4S2S1ME-8 8GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C
Crucial Technology CT16G4SFD824A.C16FHD 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS8213.C8FBD1 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M471A1K43CB1-CRC 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology BL32G32C16U4W.M16FB1 32GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston 8ATF1G64AZ-2G3A1 8GB
报告一个错误
×
Bug description
Source link