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Ramaxel Technology RMR5040ED58E9W1600 4GB
Corsair CMSX16GX4M2A3000C18 8GB

Ramaxel Technology RMR5040ED58E9W1600 4GB vs Corsair CMSX16GX4M2A3000C18 8GB

总分
star star star star star
Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

总分
star star star star star
Corsair CMSX16GX4M2A3000C18 8GB

Corsair CMSX16GX4M2A3000C18 8GB

差异 规格 评论

差异

Ramaxel Technology RMR5040ED58E9W1600 4GB 需要考虑的原因
Ramaxel Technology RMR5040ED58E9W1600 4GB
报告一个错误
Corsair CMSX16GX4M2A3000C18 8GB 需要考虑的原因
Corsair CMSX16GX4M2A3000C18 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 43
    左右 -43% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.6 left arrow 9.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMR5040ED58E9W1600 4GB
Corsair CMSX16GX4M2A3000C18 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 30
  • 读取速度，GB/s
    13.2 left arrow 16.9
  • 写入速度，GB/s
    9.3 left arrow 13.6
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2285 left arrow 3050

Ramaxel Technology RMR5040ED58E9W1600 4GB RAM的比较

G Skill Intl F3-1600C11-8GISL 8GB
A-DATA Technology DDR4 4133 8GB

Corsair CMSX16GX4M2A3000C18 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Corsair CMSX16GX4M2A3000C18 8GB
Corsair CMSX16GX4M2A3000C18 8GB
内存RAM
SK Hynix HMT451U6BFR8A-PB 4GB
SK Hynix HMT451U6BFR8A-PB 4GB
Samsung M378A5244CB0-CRC 4GB
Samsung M378A5244CB0-CRC 4GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CM4X8GD3000C15K4 8GB
Corsair CM4X8GD3000C15K4 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK128GX4M8X3800C19 16GB
Corsair CMK128GX4M8X3800C19 16GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Apacer Technology 78.CAGMR.ARC0B 8GB
Apacer Technology 78.CAGMR.ARC0B 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO10240
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Team Group Inc. TEAMGROUP-UD4-4000 4GB
Team Group Inc. TEAMGROUP-UD4-4000 4GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
G Skill Intl F4-4000C15-8GVK 8GB
G Skill Intl F4-4000C15-8GVK 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Patriot Memory (PDP Systems) PSD432G32002 32GB
Patriot Memory (PDP Systems) PSD432G32002 32GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-2400C14-16GVK 16GB
G Skill Intl F4-2400C14-16GVK 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
SK Hynix HMA82GR8AMR4N-TF 16GB
SK Hynix HMA82GR8AMR4N-TF 16GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-4800C19-8GTZRC 8GB
G Skill Intl F4-4800C19-8GTZRC 8GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB
内存RAM