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Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK128GX4M8X3800C19 16GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Corsair CMK128GX4M8X3800C19 16GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Corsair CMK128GX4M8X3800C19 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
16.1
测试中的平均数值
需要考虑的原因
Corsair CMK128GX4M8X3800C19 16GB
报告一个错误
低于PassMark测试中的延时,ns
68
77
左右 -13% 更低的延时
更快的写入速度,GB/s
9.0
2,622.0
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK128GX4M8X3800C19 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
68
读取速度,GB/s
3,405.2
16.1
写入速度,GB/s
2,622.0
9.0
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
763
2037
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Corsair CMK128GX4M8X3800C19 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK128GX4M8X3800C19 16GB
SK Hynix HMT151R7TFR4C-H9 4GB
Corsair CM4X8GF2400C14K4 8GB
Corsair CMZ16GX3M2A2400C10 8GB
King Tiger Technology Tigo-2400MHz-8G 8GB
Samsung M378B5673EH1-CF8 2GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
SK Hynix HMT41GU7BFR8C-RD 8GB
Hewlett-Packard 7EH55AA# 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Corsair CMW16GX4M2C3200C16 8GB
G Skill Intl F4-3600C14-8GTZNB 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS8G4D26BFSB.16FBD2 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kingston 9965669-032.A00G 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT8G4DFS8213.M8FH 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-4000C18-8GTZR 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Samsung M378A5244CB0-CTD 4GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Smart Modular SF4641G8CKHI6DFSEG 8GB
报告一个错误
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Bug description
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