Ramaxel Technology RMR5040ED58E9W1600 4GB vs G Skill Intl F4-2133C15-4GFX 4GB

总分

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

总分

G Skill Intl F4-2133C15-4GFX 4GB

G Skill Intl F4-2133C15-4GFX 4GB

差异规格评论

差异

Ramaxel Technology RMR5040ED58E9W1600 4GB

需要考虑的原因
Ramaxel Technology RMR5040ED58E9W1600 4GB

报告一个错误

低于PassMark测试中的延时，ns

43 80

左右 46% 更低的延时
更快的写入速度，GB/s

9.3 7.4

测试中的平均数值

G Skill Intl F4-2133C15-4GFX 4GB

需要考虑的原因
G Skill Intl F4-2133C15-4GFX 4GB

报告一个错误

更快的读取速度，GB/s

14.1 13.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMR5040ED58E9W1600 4GB

G Skill Intl F4-2133C15-4GFX 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 80
读取速度，GB/s

13.2 14.1
写入速度，GB/s

9.3 7.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2285 1564

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273CH0-CH9 4GB

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Kingston 9965516-112.A00LF 16GB

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Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 99U5678-029.A00G 8GB

Kingston 99U5678-029.A00G 8GB

Samsung M471B5273EB0-CK0 4GB

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Golden Empire CL15-17-17 D4-2666 8GB

Golden Empire CL15-17-17 D4-2666 8GB

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Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-4000C16-16GTRS 16GB

G Skill Intl F4-4000C16-16GTRS 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

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Apacer Technology 78.C2GFK.AR20B 8GB