RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
比较
Ramaxel Technology RMSA3260NA78HAF-2666 8GB vs Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
总分
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
总分
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
差异
规格
评论
差异
需要考虑的原因
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
报告一个错误
更高的内存带宽,mbps
21300
17000
左右 1.25% 更高的带宽
需要考虑的原因
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
报告一个错误
低于PassMark测试中的延时,ns
34
42
左右 -24% 更低的延时
更快的读取速度,GB/s
17.3
13.3
测试中的平均数值
更快的写入速度,GB/s
14.5
7.8
测试中的平均数值
规格
完整的技术规格清单
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
42
34
读取速度,GB/s
13.3
17.3
写入速度,GB/s
7.8
14.5
内存带宽,mbps
21300
17000
Other
描述
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2181
3606
Ramaxel Technology RMSA3260NA78HAF-2666 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CM3X8GA2400C11Y2R 8GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-3600C18-32GTZN 32GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-3000C15-16GVR 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-2400C15-16GTZRX 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
Avant Technology F6451U64F9333G 4GB
Golden Empire CL18-20-20 D4-3200 8GB
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Kingston 2GB-DDR2 800Mhz 2GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
Samsung M471B1G73DB0-YK0 8GB
SK Hynix HMA81GS6CJR8N-VK 8GB
Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology BL32G32C16U4W.M16FB1 32GB
Samsung M393B1G70BH0-YK0 8GB
V-Color Technology Inc. TA48G36S818BNK 8GB
G Skill Intl F5-5600J4040C16G 16GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
报告一个错误
×
Bug description
Source link