Ramaxel Technology RMT3010EC58E8F1333 2GB vs G Skill Intl F4-2666C15-8GVK 8GB

总分

Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

总分

G Skill Intl F4-2666C15-8GVK 8GB

G Skill Intl F4-2666C15-8GVK 8GB

差异规格评论

差异

Ramaxel Technology RMT3010EC58E8F1333 2GB

需要考虑的原因
Ramaxel Technology RMT3010EC58E8F1333 2GB

报告一个错误

G Skill Intl F4-2666C15-8GVK 8GB

需要考虑的原因
G Skill Intl F4-2666C15-8GVK 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 26

左右 -24% 更低的延时
更快的读取速度，GB/s

18.5 13.5

测试中的平均数值
更快的写入速度，GB/s

13.7 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3010EC58E8F1333 2GB

G Skill Intl F4-2666C15-8GVK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 21
读取速度，GB/s

13.5 18.5
写入速度，GB/s

7.8 13.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1932 3202

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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G Skill Intl F4-3000C15-8GVGB 8GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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Corsair CMSX8GX4M1A2666C18 8GB

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Micron Technology ILG8GS2400A 8GB

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SK Hynix DDR2 800 2G 2GB

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Corsair CMU32GX4M4C3466C16 8GB

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Ramaxel Technology RMT3010EC58E8F1333 2GB

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Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

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Micron Technology 16ATF2G64AZ-3G2E1 16GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

SK Hynix HMA82GU6DJR8N-XN 16GB

SK Hynix HMA82GU6DJR8N-XN 16GB

Samsung M378B5273CH0-CH9 4GB

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Corsair CM2X1024-6400C4 1GB

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Kingston KY7N41-MID 8GB

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Team Group Inc. TEAMGROUP-D4-3733 8GB

Team Group Inc. TEAMGROUP-D4-3733 8GB