Ramaxel Technology RMT3010EC58E8F1333 2GB vs Ramaxel Technology RMSA3310ME96HAF-3200 8GB

总分

Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

总分

Ramaxel Technology RMSA3310ME96HAF-3200 8GB

Ramaxel Technology RMSA3310ME96HAF-3200 8GB

差异规格评论

差异

Ramaxel Technology RMT3010EC58E8F1333 2GB

需要考虑的原因
Ramaxel Technology RMT3010EC58E8F1333 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 56

左右 54% 更低的延时

Ramaxel Technology RMSA3310ME96HAF-3200 8GB

需要考虑的原因
Ramaxel Technology RMSA3310ME96HAF-3200 8GB

报告一个错误

更快的读取速度，GB/s

15.5 13.5

测试中的平均数值
更快的写入速度，GB/s

8.2 7.8

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMSA3310ME96HAF-3200 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 56
读取速度，GB/s

13.5 15.5
写入速度，GB/s

7.8 8.2
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1932 1964

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMSA3310ME96HAF-3200 8GB

Ramaxel Technology RMSA3310ME96HAF-3200 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-2400C17-8GNT 8GB

G Skill Intl F4-2400C17-8GNT 8GB

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

Kingston XRGM6C-MIB 16GB

Kingston XRGM6C-MIB 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

SK Hynix HMA82GS6CJR8N-V-V 16GB

SK Hynix HMA82GS6CJR8N-V-V 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M378A1G43EB1-CRC 8GB

Samsung M378A1G43EB1-CRC 8GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Kingston KTP9W1-MIE 16GB

Kingston KTP9W1-MIE 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

G Skill Intl F4-2666C18-4GFX 4GB

G Skill Intl F4-2666C18-4GFX 4GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Corsair CMK64GX4M8X4133C19 8GB

Corsair CMK64GX4M8X4133C19 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

G Skill Intl F4-3600C14-16GVKA 16GB

G Skill Intl F4-3600C14-16GVKA 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Mushkin 99[2/7/4]192[F/T] 4GB

Mushkin 99[2/7/4]192[F/T] 4GB