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Ramaxel Technology RMT3160ED58E9W1600 4GB
G Skill Intl F4-2133C15-4GRK 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB vs G Skill Intl F4-2133C15-4GRK 4GB

总分
star star star star star
Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

总分
star star star star star
G Skill Intl F4-2133C15-4GRK 4GB

G Skill Intl F4-2133C15-4GRK 4GB

差异 规格 评论

差异

Ramaxel Technology RMT3160ED58E9W1600 4GB 需要考虑的原因
Ramaxel Technology RMT3160ED58E9W1600 4GB
报告一个错误
G Skill Intl F4-2133C15-4GRK 4GB 需要考虑的原因
G Skill Intl F4-2133C15-4GRK 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 40
    左右 -48% 更低的延时
  • 更快的读取速度，GB/s
    13.5 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.7 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT3160ED58E9W1600 4GB
G Skill Intl F4-2133C15-4GRK 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 27
  • 读取速度，GB/s
    12.3 left arrow 13.5
  • 写入速度，GB/s
    7.8 left arrow 10.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1806 left arrow 2689

Ramaxel Technology RMT3160ED58E9W1600 4GB RAM的比较

AMD R538G1601S2LS 8GB
Kingston 9905678-023.A00G 8GB

G Skill Intl F4-2133C15-4GRK 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
G Skill Intl F4-2133C15-4GRK 4GB
G Skill Intl F4-2133C15-4GRK 4GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston KHX21334D4/8G 8GB
Kingston KHX21334D4/8G 8GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Super Talent F21UB8GS 8GB
Super Talent F21UB8GS 8GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-2400C16-8GFXR 8GB
G Skill Intl F4-2400C16-8GFXR 8GB
内存RAM
Mushkin 996902 2GB
Mushkin 996902 2GB
Kingston 99U5702-089.A00G 8GB
Kingston 99U5702-089.A00G 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-4000C19-8GTZ 8GB
G Skill Intl F4-4000C19-8GTZ 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2400C16-8GIS 8GB
G Skill Intl F4-2400C16-8GIS 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Micron Technology 8ATF1G64AZ-3G2J1 8GB
Micron Technology 8ATF1G64AZ-3G2J1 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Kingston 9965640-035.C00G 32GB
Kingston 9965640-035.C00G 32GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-4600C18-8GTZR 8GB
G Skill Intl F4-4600C18-8GTZR 8GB
内存RAM
Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI16D3LS1MNG/8G 8GB
Corsair CMK16GX4M4A2133C13 4GB
Corsair CMK16GX4M4A2133C13 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Lexar Co Limited LD4AS016G-H2666G 16GB
Lexar Co Limited LD4AS016G-H2666G 16GB
内存RAM