RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Ramaxel Technology RMT3170EB68F9W1600 4GB
ADVAN Inc AM42E28UD04T-NVL 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB vs ADVAN Inc AM42E28UD04T-NVL 4GB

总分
star star star star star
Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

总分
star star star star star
ADVAN Inc AM42E28UD04T-NVL 4GB

ADVAN Inc AM42E28UD04T-NVL 4GB

差异 规格 评论

差异

Ramaxel Technology RMT3170EB68F9W1600 4GB 需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB
报告一个错误
ADVAN Inc AM42E28UD04T-NVL 4GB 需要考虑的原因
ADVAN Inc AM42E28UD04T-NVL 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 43
    左右 -87% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 11.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.4 left arrow 7.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT3170EB68F9W1600 4GB
ADVAN Inc AM42E28UD04T-NVL 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 23
  • 读取速度，GB/s
    11.4 left arrow 18.2
  • 写入速度，GB/s
    7.7 left arrow 14.4
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1823 left arrow 2830

Ramaxel Technology RMT3170EB68F9W1600 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Kingston HP26D4U6D8ME-16X 16GB

ADVAN Inc AM42E28UD04T-NVL 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMX8GX3M2A1600C11 4GB
Corsair CMX8GX3M2A1600C11 4GB
Mushkin 99[2/7/4]198F 8GB
Mushkin 99[2/7/4]198F 8GB
内存RAM
Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
ADVAN Inc AM42E28UD04T-NVL 4GB
ADVAN Inc AM42E28UD04T-NVL 4GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3600C18-8GTRG 8GB
G Skill Intl F4-3600C18-8GTRG 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
内存RAM
Samsung M3 78T5663EH3-CF7 2GB
Samsung M3 78T5663EH3-CF7 2GB
Crucial Technology BLS8G4D240FSB.16FADG 8GB
Crucial Technology BLS8G4D240FSB.16FADG 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMW8GX4M1Z3200C16 8GB
Corsair CMW8GX4M1Z3200C16 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology CT4G4DFS824A.C8FADP 4GB
Crucial Technology CT4G4DFS824A.C8FADP 4GB
内存RAM
Samsung M393B4G70EMB-CK0 32GB
Samsung M393B4G70EMB-CK0 32GB
G Skill Intl F4-2666C19-16GRS 16GB
G Skill Intl F4-2666C19-16GRS 16GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
SK Hynix HMA81GS6MFR8N-UH 8GB
SK Hynix HMA81GS6MFR8N-UH 8GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
Corsair CMT32GX4M2C3600C18 16GB
Corsair CMT32GX4M2C3600C18 16GB
内存RAM
Kingmax Semiconductor KLDE88F-B8MO5 2GB
Kingmax Semiconductor KLDE88F-B8MO5 2GB
Kingston 9905598-009.A00G 8GB
Kingston 9905598-009.A00G 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
内存RAM