RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
比较
Samsung M395T2863QZ4-CF76 1GB vs Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
总分
Samsung M395T2863QZ4-CF76 1GB
总分
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
更快的读取速度,GB/s
3
15.9
测试中的平均数值
更快的写入速度,GB/s
2,404.5
10.7
测试中的平均数值
需要考虑的原因
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
报告一个错误
低于PassMark测试中的延时,ns
30
104
左右 -247% 更低的延时
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
104
30
读取速度,GB/s
3,192.0
15.9
写入速度,GB/s
2,404.5
10.7
内存带宽,mbps
6400
21300
Other
描述
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
no data
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
786
2846
Samsung M395T2863QZ4-CF76 1GB RAM的比较
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9965525-140.A00LF 8GB
Crucial Technology CT8G4SFRA32A.C4FE 8GB
Samsung M395T2863QZ4-CF76 1GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Corsair CMSX8GX3M1A1600C1 8GB
SK Hynix HMT41GS6BFR8A-PB 8GB
SK Hynix HMT451U7BFR8C-RD 4GB
Crucial Technology BLS16G4S240FSD.16FBR 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-4400C19-32GVK 32GB
Kingston KHX318C10FR/8G 8GB
Corsair CMR32GX4M4D3200C16 8GB
Samsung M378B5773CH0-CH9 2GB
Golden Empire CL16-16-16 D4-3200 4GB
Samsung DDR3 8GB 1600MHz 8GB
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB
Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-2400C17-8GNT 8GB
Corsair CMX4GX3M1A1333C9 4GB
Corsair CM4X4GF2666C16K4 4GB
Kingston 9965525-140.A00LF 8GB
SK Hynix HMT351S6CFR8A-PB 4GB
Crucial Technology CT25664AA800.M16FG 2GB
Apacer Technology 78.CAGP7.AZC0B 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Mushkin MR[ABC]4U360JNNM16G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Transcend Information JM2400HLB-8G 8GB
报告一个错误
×
Bug description
Source link