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Ramaxel Technology RMT3170EB68F9W1600 4GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
比较
Ramaxel Technology RMT3170EB68F9W1600 4GB vs Chun Well Technology Holding Limited MD4U1632161DCW 16GB
总分
Ramaxel Technology RMT3170EB68F9W1600 4GB
总分
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
差异
规格
评论
差异
需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB
报告一个错误
需要考虑的原因
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
报告一个错误
低于PassMark测试中的延时,ns
31
43
左右 -39% 更低的延时
更快的读取速度,GB/s
15.7
11.4
测试中的平均数值
更快的写入速度,GB/s
13.3
7.7
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Ramaxel Technology RMT3170EB68F9W1600 4GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
43
31
读取速度,GB/s
11.4
15.7
写入速度,GB/s
7.7
13.3
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1823
3318
Ramaxel Technology RMT3170EB68F9W1600 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Kingston HP26D4U6D8ME-16X 16GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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报告一个错误
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Bug description
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