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Ramaxel Technology RMT3170EB68F9W1600 4GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
比较
Ramaxel Technology RMT3170EB68F9W1600 4GB vs Nanya Technology NT2GC64B88B0NS-CG 2GB
总分
Ramaxel Technology RMT3170EB68F9W1600 4GB
总分
Nanya Technology NT2GC64B88B0NS-CG 2GB
差异
规格
评论
差异
需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB
报告一个错误
更快的读取速度,GB/s
11.4
11.1
测试中的平均数值
更快的写入速度,GB/s
7.7
7.3
测试中的平均数值
更高的内存带宽,mbps
12800
10600
左右 1.21% 更高的带宽
需要考虑的原因
Nanya Technology NT2GC64B88B0NS-CG 2GB
报告一个错误
规格
完整的技术规格清单
Ramaxel Technology RMT3170EB68F9W1600 4GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
43
43
读取速度,GB/s
11.4
11.1
写入速度,GB/s
7.7
7.3
内存带宽,mbps
12800
10600
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度
9-9-9-24 / 1600 MHz
7-7-7-20 / 1333 MHz
排名PassMark (越多越好)
1823
1357
Ramaxel Technology RMT3170EB68F9W1600 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Kingston HP26D4U6D8ME-16X 16GB
Nanya Technology NT2GC64B88B0NS-CG 2GB RAM的比较
Nanya Technology NT2GC64B8HC0NS-CG 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Ramaxel Technology RMT3170EB68F9W1600 4GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
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G Skill Intl F4-3333C16-8GTZB 8GB
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Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Kingston KHX2133C11D3/4GX 4GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BL16G36C16U4R.M8FB1 16GB
Crucial Technology CT102464BF160B.C16 8GB
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TwinMOS 8DPT5MK8-TATP 2GB
Kingston KYXC0V-MIB 16GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology BL16G36C16U4RL.M16FE 16GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Corsair CMR32GX4M4C3600C18 8GB
报告一个错误
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