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Ramaxel Technology RMT3170EB68F9W1600 4GB
Nanya Technology NT2GC64B88B0NS-CG 2GB

Ramaxel Technology RMT3170EB68F9W1600 4GB vs Nanya Technology NT2GC64B88B0NS-CG 2GB

总分
star star star star star
Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

总分
star star star star star
Nanya Technology NT2GC64B88B0NS-CG 2GB

Nanya Technology NT2GC64B88B0NS-CG 2GB

差异 规格 评论

差异

Ramaxel Technology RMT3170EB68F9W1600 4GB 需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB
报告一个错误
  • 更快的读取速度，GB/s
    11.4 left arrow 11.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.7 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21% 更高的带宽
Nanya Technology NT2GC64B88B0NS-CG 2GB 需要考虑的原因
Nanya Technology NT2GC64B88B0NS-CG 2GB
报告一个错误

规格

完整的技术规格清单
Ramaxel Technology RMT3170EB68F9W1600 4GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    43 left arrow 43
  • 读取速度，GB/s
    11.4 left arrow 11.1
  • 写入速度，GB/s
    7.7 left arrow 7.3
  • 内存带宽，mbps
    12800 left arrow 10600
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1823 left arrow 1357

Ramaxel Technology RMT3170EB68F9W1600 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Kingston HP26D4U6D8ME-16X 16GB

Nanya Technology NT2GC64B88B0NS-CG 2GB RAM的比较

Nanya Technology NT2GC64B8HC0NS-CG 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Asgard VMA44UG-MEC1U2AW1 8GB
Asgard VMA44UG-MEC1U2AW1 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-3200C14-8GFX 8GB
G Skill Intl F4-3200C14-8GFX 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-2800C15-4GTZ 4GB
G Skill Intl F4-2800C15-4GTZ 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston 9905624-008.A00G 8GB
Kingston 9905624-008.A00G 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA81GU6CJR8N-XN 8GB
SK Hynix HMA81GU6CJR8N-XN 8GB
内存RAM
Kingston HP698650-154-MCN 4GB
Kingston HP698650-154-MCN 4GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
内存RAM
Kingston KHX1866C10D3/8GX 8GB
Kingston KHX1866C10D3/8GX 8GB
Micron Technology 16ATF2G64HZ-2G3H1 16GB
Micron Technology 16ATF2G64HZ-2G3H1 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2933C16-8GFX 8GB
G Skill Intl F4-2933C16-8GFX 8GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Corsair CMK32GX4M2A2133C13 16GB
Corsair CMK32GX4M2A2133C13 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Corsair CMD16GX4M4B3200C15 4GB
Corsair CMD16GX4M4B3200C15 4GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Micron Technology TEAMGROUP-UD4-2400 16GB
Micron Technology TEAMGROUP-UD4-2400 16GB
内存RAM