Ramos Technology EWB8GB681CA3-16IC 8GB vs Crucial Technology CT4G4DFS8213.C8FBD2 4GB

总分

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

总分

Crucial Technology CT4G4DFS8213.C8FBD2 4GB

Crucial Technology CT4G4DFS8213.C8FBD2 4GB

差异规格评论

差异

Ramos Technology EWB8GB681CA3-16IC 8GB

需要考虑的原因
Ramos Technology EWB8GB681CA3-16IC 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 31

左右 19% 更低的延时

Crucial Technology CT4G4DFS8213.C8FBD2 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FBD2 4GB

报告一个错误

更快的写入速度，GB/s

10.6 9.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Ramos Technology EWB8GB681CA3-16IC 8GB

Crucial Technology CT4G4DFS8213.C8FBD2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 31
读取速度，GB/s

15.3 15.3
写入速度，GB/s

9.8 10.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2646 2659

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMW32GX4M2Z3200C16 16GB

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Kingston HP26D4U6S8ME-8X 8GB

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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SK Hynix HMA82GS6DJR8N-VK 16GB

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Apacer Technology GD2.1827CS.003 8GB

Apacer Technology GD2.1827CS.003 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

G Skill Intl F4-4000C16-8GTZRA 8GB

G Skill Intl F4-4000C16-8GTZRA 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Golden Empire CL16-16-16 D4-2800 8GB

Golden Empire CL16-16-16 D4-2800 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Hewlett-Packard 7EH55AA# 8GB

Hewlett-Packard 7EH55AA# 8GB