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Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-4000C18-32GTZN 32GB

Ramos Technology EWB8GB681CA3-16IC 8GB vs G Skill Intl F4-4000C18-32GTZN 32GB

总分
star star star star star
Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

总分
star star star star star
G Skill Intl F4-4000C18-32GTZN 32GB

G Skill Intl F4-4000C18-32GTZN 32GB

差异 规格 评论

差异

Ramos Technology EWB8GB681CA3-16IC 8GB 需要考虑的原因
Ramos Technology EWB8GB681CA3-16IC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 29
    左右 14% 更低的延时
G Skill Intl F4-4000C18-32GTZN 32GB 需要考虑的原因
G Skill Intl F4-4000C18-32GTZN 32GB
报告一个错误
  • 更快的读取速度，GB/s
    20.6 left arrow 15.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    18.8 left arrow 9.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-4000C18-32GTZN 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 29
  • 读取速度，GB/s
    15.3 left arrow 20.6
  • 写入速度，GB/s
    9.8 left arrow 18.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2646 left arrow 4112

Ramos Technology EWB8GB681CA3-16IC 8GB RAM的比较

Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EEB8GB681CAE-16IC 8GB

G Skill Intl F4-4000C18-32GTZN 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-4000C18-32GTZN 32GB
G Skill Intl F4-4000C18-32GTZN 32GB
内存RAM
Kingston KHX1866C10D3/4G 4GB
Kingston KHX1866C10D3/4G 4GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Samsung M386A8K40BMB-CPB 64GB
Samsung M386A8K40BMB-CPB 64GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Samsung M474A2K43BB1-CPB 16GB
Samsung M474A2K43BB1-CPB 16GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-2400C15-16GTZR 16GB
G Skill Intl F4-2400C15-16GTZR 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston 9905700-047.A00G 16GB
Kingston 9905700-047.A00G 16GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
G Skill Intl F4-3333C16-8GTZSK 8GB
G Skill Intl F4-3333C16-8GTZSK 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CM4B16G4J2400A16K2-O 16GB
Corsair CM4B16G4J2400A16K2-O 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Panram International Corporation PUD42400C154G2NJW 4GB
Panram International Corporation PUD42400C154G2NJW 4GB
内存RAM
Corsair CML8GX3M2A1866C9 4GB
Corsair CML8GX3M2A1866C9 4GB
Patriot Memory (PDP Systems) PSD416G24002 16GB
Patriot Memory (PDP Systems) PSD416G24002 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston ACR32D4S2S1ME-8 8GB
Kingston ACR32D4S2S1ME-8 8GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Kingston 9905713-017.A00G 4GB
Kingston 9905713-017.A00G 4GB
内存RAM