Ramos Technology EWB8GB681CA3-16IC 8GB vs Micron Technology 8ATF1G64HZ-3G2E1 8GB

总分

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

总分

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

差异规格评论

差异

Ramos Technology EWB8GB681CA3-16IC 8GB

需要考虑的原因
Ramos Technology EWB8GB681CA3-16IC 8GB

报告一个错误

Micron Technology 8ATF1G64HZ-3G2E1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-3G2E1 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 25

左右 -9% 更低的延时
更快的读取速度，GB/s

17 15.3

测试中的平均数值
更快的写入速度，GB/s

13.4 9.8

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Ramos Technology EWB8GB681CA3-16IC 8GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 23
读取速度，GB/s

15.3 17.0
写入速度，GB/s

9.8 13.4
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2646 2936

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4DFRA32A.M16FR 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

A-DATA Technology AM2P24HC4R1-BUPS 4GB

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Chun Well Technology Holding Limited MD4U0840180BCW 8GB

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Crucial Technology CT25664AA800.M16FM 2GB

Corsair CMW32GX4M4C3000C15 8GB

Corsair CMW32GX4M4C3000C15 8GB