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Ramos Technology EWB8GB681CA3-16IC 8GB
Netac Technology Co Ltd EKBLACK4163216AD 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB vs Netac Technology Co Ltd EKBLACK4163216AD 8GB

总分
star star star star star
Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

总分
star star star star star
Netac Technology Co Ltd EKBLACK4163216AD 8GB

Netac Technology Co Ltd EKBLACK4163216AD 8GB

差异 规格 评论

差异

Ramos Technology EWB8GB681CA3-16IC 8GB 需要考虑的原因
Ramos Technology EWB8GB681CA3-16IC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 36
    左右 31% 更低的延时
Netac Technology Co Ltd EKBLACK4163216AD 8GB 需要考虑的原因
Netac Technology Co Ltd EKBLACK4163216AD 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.4 left arrow 15.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.1 left arrow 9.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Ramos Technology EWB8GB681CA3-16IC 8GB
Netac Technology Co Ltd EKBLACK4163216AD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 36
  • 读取速度，GB/s
    15.3 left arrow 16.4
  • 写入速度，GB/s
    9.8 left arrow 11.1
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2646 left arrow 2653

Ramos Technology EWB8GB681CA3-16IC 8GB RAM的比较

Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EEB8GB681CAE-16IC 8GB

Netac Technology Co Ltd EKBLACK4163216AD 8GB RAM的比较

Kingston KF2933C17S4/16G 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Netac Technology Co Ltd EKBLACK4163216AD 8GB
Netac Technology Co Ltd EKBLACK4163216AD 8GB
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Crucial Technology BLS16G4S26BFSD.16FD 16GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
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Kingston HP26D4S9S8MHF-8 8GB
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Kingston ACR256X64D3S1333C9 2GB
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Corsair CMW32GX4M2D3600C18 16GB
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Corsair CM2X1024-6400C4 1GB
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Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N
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Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston 9932291-002.A00G 4GB
Kingston 9932291-002.A00G 4GB
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Samsung DDR3 8GB 1600MHz 8GB
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Corsair CM5S16GM4800A40K2 16GB
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G Skill Intl F4-3200C14-16GVK 16GB
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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Corsair CMD16GX4M2B3200C14 8GB
内存RAM
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AMD R538G1601U2S 8GB
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内存RAM
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SK Hynix HYMP164U64CP6-Y5 512MB
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Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
内存RAM
SK Hynix HMT41GU7BFR8C-RD 8GB
SK Hynix HMT41GU7BFR8C-RD 8GB
G Skill Intl F4-2800C15-8GTZB 8GB
G Skill Intl F4-2800C15-8GTZB 8GB
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Micron Technology 8ATF2G64HZ-3G2E2 16GB
A-DATA Technology AO1P32MCST2-BZPS 16GB
A-DATA Technology AO1P32MCST2-BZPS 16GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Corsair CMN32GX4M2Z3600C18 16GB
Corsair CMN32GX4M2Z3600C18 16GB
内存RAM