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Ramos Technology RMB4GB58BCA3-13HC 4GB
Crucial Technology BLS4G4D240FSC.8FBD2 4GB
比较
Ramos Technology RMB4GB58BCA3-13HC 4GB vs Crucial Technology BLS4G4D240FSC.8FBD2 4GB
总分
Ramos Technology RMB4GB58BCA3-13HC 4GB
总分
Crucial Technology BLS4G4D240FSC.8FBD2 4GB
差异
规格
评论
差异
需要考虑的原因
Ramos Technology RMB4GB58BCA3-13HC 4GB
报告一个错误
低于PassMark测试中的延时,ns
23
34
左右 32% 更低的延时
需要考虑的原因
Crucial Technology BLS4G4D240FSC.8FBD2 4GB
报告一个错误
更快的读取速度,GB/s
15.9
11.6
测试中的平均数值
更快的写入速度,GB/s
11.5
5.6
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Ramos Technology RMB4GB58BCA3-13HC 4GB
Crucial Technology BLS4G4D240FSC.8FBD2 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
23
34
读取速度,GB/s
11.6
15.9
写入速度,GB/s
5.6
11.5
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1751
2824
Ramos Technology RMB4GB58BCA3-13HC 4GB RAM的比较
Ramos Technology RMB4GB584CA3-13HC 4GB
takeMS International AG TMS4GB364E081139EM 4GB
Crucial Technology BLS4G4D240FSC.8FBD2 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CMR32GX4M4D3200C16 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMD16GX4M2B3200C14 8GB
Corsair CML16GX3M2A1600C10 8GB
Corsair CMD32GX4M4A2800C16 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston XN205T-MIE 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4S24AM.M16FB 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
报告一个错误
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Bug description
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