Ramos Technology RMB4GB58BCA3-13HC 4GB vs G Skill Intl F4-3200C16-16GTZR 16GB

总分

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

总分

G Skill Intl F4-3200C16-16GTZR 16GB

G Skill Intl F4-3200C16-16GTZR 16GB

差异规格评论

差异

Ramos Technology RMB4GB58BCA3-13HC 4GB

需要考虑的原因
Ramos Technology RMB4GB58BCA3-13HC 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 30

左右 23% 更低的延时

G Skill Intl F4-3200C16-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-3200C16-16GTZR 16GB

报告一个错误

更快的读取速度，GB/s

18.4 11.6

测试中的平均数值
更快的写入速度，GB/s

14.8 5.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Ramos Technology RMB4GB58BCA3-13HC 4GB

G Skill Intl F4-3200C16-16GTZR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 30
读取速度，GB/s

11.6 18.4
写入速度，GB/s

5.6 14.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1751 3657

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMAA4GU6AJR8N-XN 32GB

SK Hynix HMAA4GU6AJR8N-XN 32GB

Team Group Inc. Vulcan-1600 4GB

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Golden Empire CL18-20-20 D4-3600 8GB

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Kingston KHX3200C18D4/8G 8GB

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Kingston KHX16 4GB

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Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Patriot Memory (PDP Systems) 3733 C17 Series 8GB

Patriot Memory (PDP Systems) 3733 C17 Series 8GB

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takeMS International AG TMS2GB264D082-805G 2GB

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Apacer Technology GD2.0918CT.001 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

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Micron Technology 18ASF2G72PDZ-2G6D1 16GB

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

Crucial Technology CT8G4DFD8213.C16FBD1 8GB

Crucial Technology CT8G4DFD8213.C16FBD1 8GB