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Samsung 1600 CL10 Series 8GB
Apacer Technology 78.CAGNK.4040B 8GB
比较
Samsung 1600 CL10 Series 8GB vs Apacer Technology 78.CAGNK.4040B 8GB
总分
Samsung 1600 CL10 Series 8GB
总分
Apacer Technology 78.CAGNK.4040B 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
需要考虑的原因
Apacer Technology 78.CAGNK.4040B 8GB
报告一个错误
低于PassMark测试中的延时,ns
17
25
左右 -47% 更低的延时
更快的读取速度,GB/s
22.1
16.1
测试中的平均数值
更快的写入速度,GB/s
17.2
10.1
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Apacer Technology 78.CAGNK.4040B 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
17
读取速度,GB/s
16.1
22.1
写入速度,GB/s
10.1
17.2
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2764
4042
Samsung 1600 CL10 Series 8GB RAM的比较
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Apacer Technology 78.CAGNK.4040B 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Patriot Memory (PDP Systems) PSD22G80026 2GB
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TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CM4X8GD3000C15K4 8GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3333C16-8GTZ 8GB
Kingston KVR800D2N6/2G 2GB
Corsair CMR64GX4M8X3800C19 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Corsair CMH16GX4M2Z3200C16 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Crucial Technology CT8G4SFRA32A.C8FE 8GB
Samsung M386B4G70DM0-CMA4 32GB
A-DATA Technology AO1P26KC8T1-BPXS 8GB
Kingston KVR533D2N4 512MB
Kingston 9965596-019.B01G 4GB
Samsung M471B1G73EB0-YK0 8GB
Samsung M471A1K43DB1-CWE 8GB
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