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Samsung 1600 CL10 Series 8GB
Asgard VMA42UH-MEC1U2AJ2 16GB

Samsung 1600 CL10 Series 8GB vs Asgard VMA42UH-MEC1U2AJ2 16GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Asgard VMA42UH-MEC1U2AJ2 16GB

Asgard VMA42UH-MEC1U2AJ2 16GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
Asgard VMA42UH-MEC1U2AJ2 16GB 需要考虑的原因
Asgard VMA42UH-MEC1U2AJ2 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.4 left arrow 16.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.1 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Asgard VMA42UH-MEC1U2AJ2 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 25
  • 读取速度，GB/s
    16.1 left arrow 16.4
  • 写入速度，GB/s
    10.1 left arrow 14.1
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 3232

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Asgard VMA42UH-MEC1U2AJ2 16GB RAM的比较

Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Essencore Limited KD4AGU880-36A180U 16GB
Essencore Limited KD4AGU880-36A180U 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Asgard VMA42UH-MEC1U2AJ2 16GB
Asgard VMA42UH-MEC1U2AJ2 16GB
内存RAM
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
内存RAM
Ramaxel Technology RMN1740HC48D8F667A 2GB
Ramaxel Technology RMN1740HC48D8F667A 2GB
Kingston 9905678-058.A00G 4GB
Kingston 9905678-058.A00G 4GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Apacer Technology 78.CAGSZ.4070B 8GB
Apacer Technology 78.CAGSZ.4070B 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905734-062.A00G 32GB
Kingston 9905734-062.A00G 32GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston 9905711-038.A00G 8GB
Kingston 9905711-038.A00G 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
A-DATA Technology AO1P32NC8T1-BCIS 8GB
A-DATA Technology AO1P32NC8T1-BCIS 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Kllisre DDR4-8GB 8GB
Kllisre DDR4-8GB 8GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Golden Empire CL18-20-20 D4-3600 8GB
Golden Empire CL18-20-20 D4-3600 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-4400C18-8GTRG 8GB
G Skill Intl F4-4400C18-8GTRG 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
SK Hynix HMA451U7AFR8N-TF 4GB
SK Hynix HMA451U7AFR8N-TF 4GB
内存RAM