Samsung 1600 CL10 Series 8GB vs Avant Technology J641GU42J7240N3 8GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Avant Technology J641GU42J7240N3 8GB

Avant Technology J641GU42J7240N3 8GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

Avant Technology J641GU42J7240N3 8GB

需要考虑的原因
Avant Technology J641GU42J7240N3 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 25

左右 -9% 更低的延时
更快的读取速度，GB/s

16.7 16.1

测试中的平均数值
更快的写入速度，GB/s

12.1 10.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Avant Technology J641GU42J7240N3 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 23
读取速度，GB/s

16.1 16.7
写入速度，GB/s

10.1 12.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2764 2977

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Samsung M471B5773DH0-CH9 2GB

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Corsair CMG16GX4M2D3600C18 8GB

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Kingston 9905403-011.A03LF 2GB

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Solarflare Communications CT16G4DFD824A.C16FBR 16GB

Solarflare Communications CT16G4DFD824A.C16FBR 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology CT4G4DFS824A.C8FHP 4GB

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Kingston 9965525-155.A00LF 8GB

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A-DATA Technology AM1P26KC4U1-BACS 4GB

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Kingston KVT8FP-HYC 4GB

Kingston KVT8FP-HYC 4GB

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G Skill Intl F4-3300C16-8GTZSW 8GB