Samsung 1600 CL10 Series 8GB vs Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 30

左右 17% 更低的延时
更快的读取速度，GB/s

16.1 15.5

测试中的平均数值

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

报告一个错误

更快的写入速度，GB/s

12.9 10.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 30
读取速度，GB/s

16.1 15.5
写入速度，GB/s

10.1 12.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2764 3044

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Micron Technology 4ATF51264HZ-2G3B1 4GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

G Skill Intl F4-3866C18-8GTZ 8GB

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SK Hynix HMAA2GU6AJR8N-XN 16GB

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KingSpec KingSpec 16GB

KingSpec KingSpec 16GB