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Samsung 1600 CL10 Series 8GB
Corsair CMD16GX4M2B2800C14 8GB
比较
Samsung 1600 CL10 Series 8GB vs Corsair CMD16GX4M2B2800C14 8GB
总分
Samsung 1600 CL10 Series 8GB
总分
Corsair CMD16GX4M2B2800C14 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
需要考虑的原因
Corsair CMD16GX4M2B2800C14 8GB
报告一个错误
低于PassMark测试中的延时,ns
23
25
左右 -9% 更低的延时
更快的读取速度,GB/s
18
16.1
测试中的平均数值
更快的写入速度,GB/s
13.3
10.1
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Corsair CMD16GX4M2B2800C14 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
23
读取速度,GB/s
16.1
18.0
写入速度,GB/s
10.1
13.3
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2764
3070
Samsung 1600 CL10 Series 8GB RAM的比较
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMD16GX4M2B2800C14 8GB RAM的比较
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9965525-140.A00LF 8GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMD16GX4M2B2800C14 8GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMD16GX4M2B3466C16 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Team Group Inc. TEAMGROUP-D4-3600 4GB
A-DATA Technology VDQVE1B16 2GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Samsung M471A1K1KBB0-CPB 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C14-16GTZSK 16GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology BLS8G4S240FSD.16FBD 8GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMV8GX4M1A2666C18 8GB
Corsair CMX4GX3M1A1333C9 4GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
AMD R744G2400U1S 4GB
Samsung M471B5173QH0-YK0 4GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
Apacer Technology 78.C1GET.9K10C 8GB
G Skill Intl F4-3200C15-4GRKD 4GB
报告一个错误
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Bug description
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