Samsung 1600 CL10 Series 8GB vs Corsair CMK16GX4M1A2400C14 16GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Corsair CMK16GX4M1A2400C14 16GB

Corsair CMK16GX4M1A2400C14 16GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 34

左右 26% 更低的延时
更快的读取速度，GB/s

16.1 14.7

测试中的平均数值
更快的写入速度，GB/s

10.1 9.7

测试中的平均数值

Corsair CMK16GX4M1A2400C14 16GB

需要考虑的原因
Corsair CMK16GX4M1A2400C14 16GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Corsair CMK16GX4M1A2400C14 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 34
读取速度，GB/s

16.1 14.7
写入速度，GB/s

10.1 9.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2764 2776

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK16GX4M1A2400C14 16GB

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Kingston ACR256X64D3S1333C9 2GB

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AMD R5S38G1601U2S 8GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

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Samsung M393B5270CH0-CH9 4GB

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Kingston KF3200C20S4/8G 8GB

Kingston KF3200C20S4/8G 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

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G Skill Intl F4-3200C14-16GVK 16GB