Samsung 1600 CL10 Series 8GB vs Corsair CMSX32GX4M2A2933C19 16GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Corsair CMSX32GX4M2A2933C19 16GB

Corsair CMSX32GX4M2A2933C19 16GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 30

左右 17% 更低的延时

Corsair CMSX32GX4M2A2933C19 16GB

需要考虑的原因
Corsair CMSX32GX4M2A2933C19 16GB

报告一个错误

更快的读取速度，GB/s

17.2 16.1

测试中的平均数值
更快的写入速度，GB/s

15.1 10.1

测试中的平均数值
更高的内存带宽，mbps

23400 12800

左右 1.83 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Corsair CMSX32GX4M2A2933C19 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 30
读取速度，GB/s

16.1 17.2
写入速度，GB/s

10.1 15.1
内存带宽，mbps

12800 23400

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-23400, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

2764 3428

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Gold Key Technology Co Ltd NMUD480E86-3200 8GB

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Corsair CMSX32GX4M2A2933C19 16GB

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AMD R538G1601U2S 8GB

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Kingston HX426C16FB2/8-SP 8GB

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Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Corsair CMD16GX4M4A2800C16 4GB

Corsair CMD16GX4M4A2800C16 4GB

AMD R7416G2400U2S 16GB

AMD R7416G2400U2S 16GB

Corsair CMK32GX4M2D3200C16 16GB

Corsair CMK32GX4M2D3200C16 16GB

Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

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Transcend Information TS2GLH64V1B 16GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

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Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB