Samsung 1600 CL10 Series 8GB vs Corsair CMU32GX4M4C3000C16 8GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Corsair CMU32GX4M4C3000C16 8GB

Corsair CMU32GX4M4C3000C16 8GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

Corsair CMU32GX4M4C3000C16 8GB

需要考虑的原因
Corsair CMU32GX4M4C3000C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 25

左右 -14% 更低的延时
更快的读取速度，GB/s

18.4 16.1

测试中的平均数值
更快的写入速度，GB/s

12.8 10.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Corsair CMU32GX4M4C3000C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 22
读取速度，GB/s

16.1 18.4
写入速度，GB/s

10.1 12.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2764 3205

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Kingston 9905630-052.A00G 16GB

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Kingston KP223C-ELD 2GB

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AMD R744G2400U1S 4GB

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Micron Technology 16G3200CL22 16GB

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SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

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Kingston 9905403-090.A01LF 4GB

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Crucial Technology BLS8G4D32AESBK.M8FE 8GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

SK Hynix HMA81GU7CJR8N-VK 8GB

SK Hynix HMA81GU7CJR8N-VK 8GB

A-DATA Technology VDQVE1B16 2GB

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Corsair CMK32GX4M4B3600C16 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

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V-Color Technology Inc. TL48G24S815RGB 8GB