RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung 1600 CL10 Series 8GB
Corsair CMW16GX4M2K4266C19 8GB

Samsung 1600 CL10 Series 8GB vs Corsair CMW16GX4M2K4266C19 8GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Corsair CMW16GX4M2K4266C19 8GB

Corsair CMW16GX4M2K4266C19 8GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
Corsair CMW16GX4M2K4266C19 8GB 需要考虑的原因
Corsair CMW16GX4M2K4266C19 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 25
    左右 -9% 更低的延时
  • 更快的读取速度，GB/s
    19 left arrow 16.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.5 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Corsair CMW16GX4M2K4266C19 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 23
  • 读取速度，GB/s
    16.1 left arrow 19.0
  • 写入速度，GB/s
    10.1 left arrow 16.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 3827

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Corsair CMW16GX4M2K4266C19 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMW16GX4M2K4266C19 8GB
Corsair CMW16GX4M2K4266C19 8GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
AMD R9S48G3206U2S 8GB
AMD R9S48G3206U2S 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Essencore Limited KD4AGU880-36A180U 16GB
Essencore Limited KD4AGU880-36A180U 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK16GX4M2B3200C16 8GB
Corsair CMK16GX4M2B3200C16 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology BLS8G4D26BFSB.16FBR2 8GB
Crucial Technology BLS8G4D26BFSB.16FBR2 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Avant Technology J641GU42J7240N3 8GB
Avant Technology J641GU42J7240N3 8GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Team Group Inc. 16GB
Team Group Inc. 16GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
AMD R9S48G3206U2S 8GB
AMD R9S48G3206U2S 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology BL8G30C15U4R.M8FE1 8GB
Crucial Technology BL8G30C15U4R.M8FE1 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Kingston 9905663-007.A00G 16GB
Kingston 9905663-007.A00G 16GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Apacer Technology 78.CAGPW.40C0B 8GB
Apacer Technology 78.CAGPW.40C0B 8GB
内存RAM